SSF3056C 30v complementary mosfet (preliminary) www.goodark.com page 1 of 5 rev.1.0 main product characteristics features and benefits description absolute max rating max. symbol parameter n-channel p-channel units i d @ tc = 25c continuous drain current, v gs @ 4.5v 5 -4.5 i d @ tc = 100c continuous drain current, v gs @ 4.5v 4.2 -3.4 i dm pulsed drain current 18.8 -12.5 a p d @tc = 25c power dissipation 2.1 1.8 w v ds drain-source voltage 30 -30 v v gs gate-to-source voltage 12 12 v t j t stg operating junction and storage temperature range -55 to + 150 -55 to + 150 c nmos pmos v dss 30v -30v r ds (on) 37mohm(typ.) 68mohm(typ.) i d 5a -4.5a dfn2x3-8l schematic diagram ? advanced trench mosfet process technology ? special designed for buck-boost circuit, dsc, portable devices and general purpose applications ? ultra low on-resistance with low gate charge ? 150 operating temperature ? lead free product it utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. these features combine to make this design an extremely efficient and reliable device for use in buck-boost circuit, dsc, portable devices and a wide variety of others applications. nmos pmos s1 g1 g2 s2 d1 d1 d2 d2 nmos pmos s1 g1 g2 s2 d1 d1 d2 d2
SSF3056C 30v complementary mosfet (preliminary) www.goodark.com page 2 of 5 rev.1.0 thermal resistance max. symbol characteristics typ. n-channel p-channel units junction-to-ambient (t 10s) 60 95 /w r ja junction-to-ambient (pcb mounted, steady-state) 40 40 /w electrical characteristics @t a =25 unless otherwise specified symbol parameter min. typ. max. units conditions 30 v gs = 0v, id = 250a n-channel 27.5 t j = 125c -30 v gs = 0v, id = -250a v (br)dss drain-to-source breakdown voltage p-channel -27.5 v t j = 125c n-channel 37 55 v gs =4.5v,i d = 4.8a p-channel 68 85 v gs =-4.5v,i d = -2.3a n-channel 50 90 v gs =3.5v,i d = 3.8a r ds(on) static drain-to-source on-resistance p-channel 84 115 m v gs =-3.5v,i d = -1.8a n-channel 0.7 1.48 2 v ds = v gs , i d = 250a p-channel 0.7 1.12 2 t j = 125c n-channel -0.7 -1.49 -2 v ds = v gs , i d = -250a v gs(th) gate threshold voltage p-channel -0.7 -1.26 -2 v t j = 125c n-channel 1 v ds = 30v,v gs = 0v i dss drain-to-source leakage current p-channel -1 a v ds = -30v,v gs = 0v n-channel 100 v gs =12v n-channel -100 v gs = -12v p-channel 100 v gs =12v i gss gate-to-source forward leakage p-channel -100 na v gs = -12v source-drain ratings and characteristics symbol parameter min. typ. max. units conditions 5 i s continuous source current (body diode) -4.5 a 18.8 mosfet symbol showing the integral reverse p-n junction diode. i sm pulsed source current (body diode) -12.5 a 0.82 1.2 i s =2.4a, v gs =0v v sd diode forward voltage -0.84 -1.2 v i s =-1.5a, v gs =0v
SSF3056C 30v complementary mosfet (preliminary) www.goodark.com page 3 of 5 rev.1.0 test circuits and waveforms switch waveforms: notes : the maximum current rating is limited by bond-wires. repetitive rating; pulse width limited by max. junction temperature. the power dissipation pd is based on max. junction temperature, using junction-to- ambient thermal resistance. the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with ta =25c
SSF3056C 30v complementary mosfet (preliminary) www.goodark.com page 4 of 5 rev.1.0 mechanical data dfn2x3-8l common dimensions(mm) pkg. w:very very thin ref. min. nom. max. a 0.70 0.75 0.80 a1 0.00 0.05 a3 0.2 ref. d 2.95 3.00 3.05 e 1.95 2.00 2.05 b 0.25 0.30 0.35 l 0.25 0.35 0.45 d2 0.77 0.92 1.02 e2 0.38 0.53 0.63 e 0.65 bcs. notes 1. all dimensions are in millimeters. 2. tolerance 0.10mm (4 mil) unless otherwise specified 3. package body sizes exclude mold flash and gate burrs. mold flash at the non-lead sides should be less than 5 mils. 4. dimension l is measured in gauge plane. 5. controlling dimension is millimeter, converted inch dimensions are not necessarily exact. t op view bottom view side view bottom view
SSF3056C 30v complementary mosfet (preliminary) www.goodark.com page 5 of 5 rev.1.0 ordering and marking information device marking: 3056c package (available) dfn2x3-8l operating temperature range c : -55 to 150 oc devices per unit package type units/ tube tubes/ inner box units/ inner box inner boxes/ carton box units/ carton box dfn2*3-8l 3000pcs 10pcs 30000pcs 4pcs 120000pcs
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